W-5920 Oscillator Etching System

  • Selective Ion Beam Etching of 100 mm wafers
  • Typical wafer is divided into 232 etching areas and each area is etched for a user specified time
  • Continuous wafer motion during the etching process provides a smooth etching profile
  • Applications include improving the frequency distribution of SAW and FBAR wafers
  • Elevator sub-system continuously handles two magazines
  • Each magazine holds five transport boats
  • Transport boat carries two 100 mm wafers
  • Wafers are continuously loaded, etched and unloaded
  • User specified etching times are communicated to the system via network or floppy disk in a text file format

SPECIFICATIONS

Typical Uniformity Improvement: 5 Times

SYSTEM CONFIGURATION

  • Direct Drive Roughing Pump
  • Cryo Pump
  • Ion Gun
  • Elevator Sub-system
  • Computer
  • System Software
  • Light Pole

SCREEN FORMAT


Example wafer etching time in seconds

FACILITY REQUIREMENTS

Power: 208VAC 3-Phase, 7KVA, 50/60 Hz
Inlet Pressures:
    Air:
    Nitrogen:
    Process Gas:		 90 – 100 PSIG
90 – 100 PSIG
70 – 100 PSIG
20 PSIG
Dimensions: W 53" x D 37" x H 88"