Sapphire Substrate c

Sapphire Substrates

c-plane

Basal Plane Sapphire Substrates with one or both surfaces polished are useful for the growth of lll-V and ll-Vl compoounds, such as GaN, for bright blue and green LED and laser diodes. Other applications include mercury cadmium telluride for infrared detector applications.

Sapphire Substrate Slice
Sapphire Profile Surface Profile

Standard Specifications
Material	Czochralski grown sapphire (>=99.995% High Purity monocrystalline Al₂O₃).
Surface Orientation	C-Plane (0001) surface orientation, also called 0-degrees, off M (1-100) 0.2°, 0.3° . Other offcuts available.
Crystallinity	No visual evidence of slips, twins, lineage or fractures
Dimensions	Outer Diameter	50.8mm ± 0.1mm / 76.2mm ± 0.25mm / 100.0mm ± 0.4mm
	Thickness	500μm ± 10μm / 430μm ± 10μm / 330μm ± 15μm
	Surface Flatness	<25μm, depending on thickness
	Surface Bow	<25μm, depending on thickness
	Surface Taper	<25μm, depending on thickness
	Primary Flat Length	16mm ± 1mm / 22mm ± 1mm / 32.5mm ± 1mm
	Primary Flat Location	Parallel to the A-axis <1 1 -2 0>, within 0.2 °
Edges	The edges of the substrates have a ground finish.
Edge Chips	Edge defects in general will not exceed those stated in SEMI M3-91.
Frontside Surface Finish	A smooth, polished surface finish suitable for epitaxy. No visible scratches, pits, dimples or contamination allowed. Ra typically < 0.20nm.
Backside Surface Finish	Depends on whether wafer is single side polished or double side polished. SSP: Fine ground, Ra typically 0.4 to 1.5μm. DSP: Polished.
Note	Other wafers orientations are available, including R-plane (1 -1 0 2), A-plane (1 1 -2 0) and M-plane (1 -1 0 0) .

The data above is representative only, with a combination of data from our suppliers, and should not be considered absolute or warrantable. Specifications will be in given in our quotations and additional information is available on request. For a quotation please do not hesitate to contact us with your specific requirements.